Samsung to mass-produce the tenth-generation V-NAND flash memory in 2025-2026

Accoridng to the latest information, Samsung is looking to mass-produce the tenth-generation V-NAND in 2025-2026, to 430 levels.

Recently it was reported that the ninth-generation V-NAND that Samsung plans to mass-produce in 2024 will be in the range of 280-layer 3D NAND. Now, the company is discussing skipping 300 layers and going directly to 430 layers.

To recall, the V-NAND is Samsung’s first flash memory technology in 2013, which connects each layer by drilling holes in the three-dimensional space of vertically stacked planar layers.

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The first generation of V-NAND was introduced in 2013 and had 24 layers. Since then, the second generation has 32 layers, the third generation has 48 layers, the fourth generation has 64 layers, the fifth generation has 92 layers, the sixth generation has 128 layers, and the seventh generation has 176 layers. Each generation goes through about 1 year to 1 year and 6 months of mass production. Moving ahead to the eighth-generation V-NAND can provide a 1Tb (128GB) solution.

V-NAND flash memory

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