Samsung Electronics launched its full-scale commercialisation of DDR5 DRAM. It is developed using the industry’s first High-K metal gate (HKMG) process. Reportedly, the chip was supplied to Taiwanese electronic companies.
As per the semiconductor analyst specialist TechInsiders. Samsung Electronics supplied 16Gb (Gigabit) DDR5 DRAM which is based on the HKMG process to a Taiwanese computer hardware manufacturer.
“We have confirmed that Samsung Electronics’ HKMG DDR5 DRAM is mounted inside G.Skill’s ‘Trident Z5 Series’ products,” TechInsiders said, “As Samsung Electronics applies HKMG technology to DDR5 following GDDR6, we expect HKMG to become the new industry standard for the next generation DRAM industry.”
It is noted that GESKILL is a Taiwan-based manufacturer and they achieve expertise in high-performance memory modules. The primary business of the firm is to receive the best memory products from memory manufacturers. This includes the giants like Samsung Electronics and SK Hynix. And after that tune them to achieve optimal overclocking. It is basically a technology that accelerates the clock to maximize memory performance. Whereas this year, the company continues to launch the DDR5-based Trident Z5 series.
Additionally, TechInsiders has been dismantling several IT products on the market. In order to analyse chip information embedded in devices. Through this deconstruct, TechInsiders released photographs of the real and internal circuitry of Samsung Electronics’ HKMG DDR5 DRAM and more.
Samsung Electronics is the first to apply the HKMG process to DDR5 DRAM
In March of last year, this is the first time when Samsung Electronics announced the success of the DRAM development. In addition to this info, DDR5 is the most recently commercialized DRAM standard. While its data processing speed is twice as fast as DDR4 respectively. It is to be worth mentioning here that Samsung Electronics is the first in the industry to apply the HKMG process to this DDR5 DRAM.
What is HKMG?
HKMG is a process by which it replaces an insulating film material that prevents intercircuit leakage current from flowing on a semiconductor wafer with a high-K material from conventional silicon oxide (SiO 2). While the gate material also utilizes metal that is more compatible with High-K than conventional polysilicon.
SK Hynix and Micron are jumping into development
Also, the High-K materials have a higher dielectric rate than conventional SiO2. It means that more charge can be held at the same voltage. And this makes the High-k insulating film to be thinner compare to those of SiO2 insulating film. Simultaneously, it still provides better leakage current isolation. And with these advantages, the demand is continuously increasing in the best-end DRAM process. Whereby, the circuit line width becomes narrower. Some other competitor companies of Samsung Electronics, such as SK Hynix and Micron are also coming into development. Although the actual commercialization of the memory has not been disclosed before.
Samsung Electronics said that “HKMG DDR5 memory modules have reduced power consumption by approximately 13% compared to the traditional process” and that “the memory is planned to be commercialized in a timely manner according to customer demand in the next-generation computing market.”
